Accession Number : ADA317122
Title : Scanning Tunneling Microscopy and Spectroscopy of Bonding Mechanisms between Advanced Ceramics and Thin Metal Films.
Descriptive Note : Final rept. 10 Mar 92-9 Mar 96,
Corporate Author : ARIZONA STATE UNIV TEMPE
Personal Author(s) : Tsong, Ignatius S.
PDF Url : ADA317122
Report Date : 28 AUG 1996
Pagination or Media Count : 8
Abstract : The technological impact of silicon carbide, SiC, covers two distinctly diverse areas: (a) as a high-strength structural ceramic, and (b) as a high-temperature wide bandgap semiconductor. In both of these applications, metallization of the SiC surface is a necessary and important procedure. From the structural point of view, a large complex shape can be produced by joining together parts of small size and simple geometries via a metallic interlayer. From the electronic point of view, good ohmic and Schottky contacts with metals are prerequisites for SiC-based device technology. For both cases, the Ti/SiC system appears to provide desirable results. When the Ti/SiC system is annealed in the temperature range 600- 1200 deg C, phases such as Ti5Si3, TiSi2, TiC and Ti3SiC2, are reportedly formed (1-6). Mechanically, these reaction products provide good bonding characteristics to yield a joint of adequate strength; while electronically, the silicide and carbide phases are metallic and thus exhibit rectifying behavior as expected from Schottky barrier diodes.
Descriptors : *METALS, *SPECTROSCOPY, *TUNNELING(ELECTRONICS), *ELECTRONIC SCANNERS, *THIN FILMS, *ELECTRON MICROSCOPY, *CERAMIC MATERIALS, *BONDING, *TITANIUM, *SILICON CARBIDES, DIODES, ELECTRONICS, STRUCTURAL PROPERTIES, HIGH TEMPERATURE, SHAPE, METAL FILMS, ENERGY GAPS, CARBIDES, SEMICONDUCTORS, PHASE, BROADBAND, PARTS, SCHOTTKY BARRIER DEVICES, SILICIDES, REACTANTS(CHEMISTRY), ELECTRIC CONTACTS.
Subject Categories : Ceramics, Refractories and Glass
Properties of Metals and Alloys
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE