Accession Number : ADA317600
Title : Gate-All-Around Devices and Circuits.
Descriptive Note : Final rept.,
Corporate Author : UNIVERSITE CATHOLIQUE DE LOUVAIN LOUVAIN-LA-NEUVE (BELGIUM)
Personal Author(s) : Colinge, J. P. ; Francis, P. ; Eggermond, J. P. ; Flandre, D. ; Baie, X.
PDF Url : ADA317600
Report Date : JUL 1993
Pagination or Media Count : 85
Abstract : The goal of this research activity is to improve the GAA technology, to apply it to the fabrication of CMOS circuits and to assess the radiation hardness of the devices. The test vehicle is a 1k SRAM which has to be demonstrated by September 1994. In the first year of activity, we have worked on the following topics: assessment of the pre-rad and post-rad characteristics of the transisters, improvement of processing (reduction of the gate oxide thickness, circuit design including issues aimed at improving the total-dose hardness.
Descriptors : *GATES(CIRCUITS), *RADIATION HARDENING, THICKNESS, OXIDES, TEST VEHICLES, CIRCUITS, COMPLEMENTARY METAL OXIDE SEMICONDUCTORS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE