Accession Number : ADA317750

Title :   Research into the Behavior of SOI Devices Operating in Extreme Environments.

Descriptive Note : Final rept. 16 Sep 95-15 Sep 96,

Corporate Author : UNIVERSITE CATHOLIQUE DE LOUVAIN LOUVAIN-LA-NEUVE (BELGIUM)

Personal Author(s) : Colinge, J. P. ; Chen, J. ; Francis, P. ; Vandooren, A. ; Eggermont, J. P.

PDF Url : ADA317750

Report Date : SEP 1996

Pagination or Media Count : 50

Abstract : This report describes (1) results of irradiation of GAA/SOI analog circuits, (2) quantum effects in GAA transisters, (3) high temperature operation of SOI magnetic sensors, (4) tungsten metallization on SOI devices, and (5) quantum wires made in SOI.

Descriptors :   *METAL OXIDE SEMICONDUCTORS, *QUANTUM ELECTRONICS, *SILICON ON INSULATOR, HIGH TEMPERATURE, GALLIUM ARSENIDES, IRRADIATION, MAGNETIC DETECTORS, ANALOG SYSTEMS, TUNGSTEN, CIRCUIT ANALYSIS, TRANSCONDUCTANCE, BELGIUM, GALLIUM ANTIMONIDES, METALLIZING.

Subject Categories : Solid State Physics
      Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE