Accession Number : ADA317837

Title :   Optical Power Limiters Using Vanadium Doped Cadmium Telluride (CdTe:V) At Near Infrared Laser Wavelengths.

Descriptive Note : Final rept. 15 Apr-15 Oct 96,

Corporate Author : BRIMROSE CORP OF AMERICA BALTIMORE MD

Personal Author(s) : Kutcher, Susan W. ; Trivedi, S. B. ; Grasza, K. ; Chen, Ruijin

PDF Url : ADA317837

Report Date : OCT 1996

Pagination or Media Count : 38

Abstract : We have developed and produced vanadium doped cadmium telluride (CdTe:V) crystals that exhibit the necessary properties for optical power limiting at near infrared wavelengths. The CdTe : V crystals that we have produced exhibit the field shielding effect, have good transmission of low intensity radiation and display high photoconductivity. We have demonstrated the use of these crystals for EOPL at 1.O6 micrometers. Furthermore, through device modelling and theoretical calculations, we have developed an innovative design to improve the performance of electrooptic power limiters: the two stage EOPL. A two stage EOPL could extend the range of input intensities over which the limiter can operate and improve the dynamic range by three orders of magnitude. We present the theory behind a two stage EOPL, a prototype design of this device, as well as a preliminary evaluation of its performance. A two stage EOPL device represents a new state of the art in EOPL performance. The EOPL material and device developed during this work have potential uses in both military as well as commercial applications. Commercial applications include two dimensional signal processing, increasing the dynamic range of sensors and civilian security systems.

Descriptors :   *ELECTROOPTICS, *OPTICAL EQUIPMENT COMPONENTS, *LIMITERS, SIGNAL PROCESSING, DETECTORS, TWO DIMENSIONAL, DISPLAY SYSTEMS, INFRARED LASERS, CADMIUM TELLURIDES, INFRARED DETECTORS, DYNAMIC RANGE, PHOTOCONDUCTIVITY.

Subject Categories : Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE