Accession Number : ADA318382
Title : Growth and Structure of MBE-Deposited Iridium Silicide.
Descriptive Note : Final technical rept. 1 Apr 95-31 Mar 96,
Corporate Author : ARIZONA RESEARCH LABS TUCSON
Personal Author(s) : Falco, Charles M.
PDF Url : ADA318382
Report Date : 09 SEP 1996
Pagination or Media Count : 6
Abstract : We were able to form pure IrSi3 films temperatures as low as 450 deg C, which is almost 200 deg C lower than previously reported. With our MBE growth techniques we also found a previously-unreported c-axis epitaxial IrSi3 growth mode at 700 deg C, found that the IrSi3 epitaxy on Si (111) was dominated by a Mode B orientation which had not previously been reported in the literature, as well as showed that the epitaxial growth of IrSi3 on Si(111) was superior to that on Si(100).
Descriptors : *EPITAXIAL GROWTH, *MOLECULAR STRUCTURE, *SILICIDES, *IRIDIUM, *MOLECULAR BEAM EPITAXY, .
Subject Categories : Inorganic Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE