Accession Number : ADA318406
Title : (AASERT-93) Rare-Earth Arsenide/Semiconductor Heterostructures: Internal Photoemission from Semi-Metal Quantum Wells.
Descriptive Note : Final rept.1 Aug 93-31 Jul 96,
Corporate Author : CALIFORNIA UNIV SANTA BARBARA QUANTUM INST
Personal Author(s) : Allan, S. J.
PDF Url : ADA318406
Report Date : JUL 1996
Pagination or Media Count : 4
Abstract : The objective of this research project was to fabricate, characterize and understand resonant tunneling diodes based on semi metallic quantum wells of ErAs, and self organized rare earth arsenide/semiconductor nanocomposites. Three terminal resonant tunneling transistors with rare earth arsenide semimetal quantum wells have been fabricated. Dispersion of the resonant channel, with quantum well thickness, reveals that electrons tunnel through quantized hole states in the semimetal quantum well. The resonant channel exhibits a giant splitting in a magnetic field due to exchange interaction with the magnetic moment on the Er 3+ ion. The exchange coupling depends on the quantum well thickness in agreement with recent theory. Self organized nanocomposites of rare earth arsenide islands in GaAlAs heterostructures have been grown by MBE. Island size can be controlled by growth temperature and/or high temperature anneal. Superlattices comprises of layers of ErAs islands have been grown. Picosecond near infrared photoresponse has been measured in these semimetal - semiconductor nanostructures.
Descriptors : *QUANTUM WELLS, *TUNNELING(ELECTRONICS), ALUMINUM GALLIUM ARSENIDES, HETEROJUNCTIONS, SUPERLATTICES, SEMICONDUCTOR DIODES, PHOTOELECTRIC EMISSION, RESONANCE, DOPING, CHANNELS, ERBIUM, PHOTOSENSITIVITY, MAGNETIC MOMENTS, NANOTECHNOLOGY.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE