Accession Number : ADA318413
Title : Oxide Substrates for GaN Thin Film Growth.
Descriptive Note : Final rept. 29 Sep 95-28 Sep 96,
Corporate Author : CRYSTAL PHOTONICS INC OVIEDO FL
Personal Author(s) : Chai, Bruce
PDF Url : ADA318413
Report Date : 03 OCT 1996
Pagination or Media Count : 6
Abstract : We started the project a year ago to look for the feasibility of using alternative oxide lattice matching substrates for GaN thin film growth. In this contract, we are able to optimize the growth process to produce uncracked single crystals of LAO and LGO for substrate fabrication. We successfully grew LAO up to 50mm in diameter and LGO up to 40 mm in diameter. We have fabricated double-sided polished substrate wafers for testing.
Descriptors : *THIN FILMS, *SUBSTRATES, *OXIDES, *GALLIUM, GROWTH(GENERAL), FABRICATION, SINGLE CRYSTALS, NITRIDES, LITHIUM, ALUMINUM.
Subject Categories : Inorganic Chemistry
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE