Accession Number : ADA318429
Title : New Sources for Chemical Beam Epitaxy.
Descriptive Note : Final rept. 1 Jan 91-31 May 96,
Corporate Author : UTAH UNIV SALT LAKE CITY COLL OF ENGINEERING
Personal Author(s) : Sadwick, Larry P. ; Stringfellow, Gerald B.
PDF Url : ADA318429
Report Date : 31 AUG 1996
Pagination or Media Count : 12
Abstract : During the course of this ARO-funded project, we were able to make significant advances in the fundamental understanding and growth of phosphorous (P) containing compounds including indium phosphide (InP), gallium phosphide (GaP), and gallium indium phosphide (GaInP) using four new P precursors: TBP, BPE, TDMAP, and TBBDMAP. This work has resulted in: (1) further development of safe and improved sources specifically for chemical beam epitaxy (CBE); (2) determination of growth mechanisms involving the new source materials; and (3) significant improvements of the quality of phosphorous (P)-based compound materials grown by CBE while reducing human and environmental risks associated with the growth of these materials. The main objective of this research was to improve the quality of P-containing III/V semiconductors grown by CBE using organometallic sources and to grow InP, GaP, and GaInP without thermally precracking the P source. Fundamental pyrolysis studies and the growth of InP, GaP, and GaInP using four alternative precursors TBP, BPE, TDMAP, and TBBDMAP was performed. The first reported growth of GaInP without precracking the phosphorous source, TDMAP, and the first reported growth of InP, GaP, and GaInP without precracking the phosphorous source, TBBDMAP were performed under this ARO-sponsored research.
Descriptors : *CHEMICALS, *EPITAXIAL GROWTH, *PHOSPHORUS, SOURCES, METHYL RADICALS, MATERIALS, PRECURSORS, ORGANOMETALLIC COMPOUNDS, BUTYL RADICALS, PHOSPHINE, INDIUM PHOSPHIDES, PYROLYSIS, GALLIUM PHOSPHIDES.
Subject Categories : Industrial Chemistry and Chemical Processing
Distribution Statement : APPROVED FOR PUBLIC RELEASE