Accession Number : ADA318475
Title : Study of Ultra-Low Resistivity Material for Monolithically Integrated Npn and Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors.
Descriptive Note : Final rept.,
Corporate Author : RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC
Personal Author(s) : Enquist, P. M.
PDF Url : ADA318475
Report Date : NOV 1996
Pagination or Media Count : 8
Abstract : The initial scope of this program was to develop ultra-low-resistivity GaAs-based materials for application to Npn and Pnp AlGaAs/GaAs heterojunction bipolar transistors (HBTs). Due to early success in the program and to complement research and development activities at the U.S Army EPSD laboratory in Ft. Monmouth, NJ, the program scope was expanded to include photonic applications of HBTs including photodetector optical receivers and monolithic integration of PIN and HBT devices for high performance receivers.
Descriptors : *GALLIUM ARSENIDES, *ALUMINUM GALLIUM ARSENIDES, *HETEROJUNCTIONS, *MONOLITHIC STRUCTURES(ELECTRONICS), *PHOTODETECTORS, *BIPOLAR TRANSISTORS, OPTICAL EQUIPMENT, INTEGRATED SYSTEMS, RECEIVERS, PHOTONS.
Subject Categories : Electrical and Electronic Equipment
Electrooptical and Optoelectronic Devices
Distribution Statement : APPROVED FOR PUBLIC RELEASE