Accession Number : ADA318507

Title :   InAsSb(P)-InAsSb-InAs Long Wavelength Lasers.

Descriptive Note : Technical rept. Apr-Oct 96,

Corporate Author : NORTHWESTERN UNIV EVANSTON IL

Personal Author(s) : Razeghi, M. ; Xu, J. ; Kim, S. ; Wu, D. ; Erdtmann, M.

PDF Url : ADA318507

Report Date : OCT 1996

Pagination or Media Count : 104

Abstract : We have grown InAsSb/InAsSbP DH laser structures and InAsSb/GaSb superlattices on InAs substrates. Our V/III ratio is between 40-100 for both the active and cladding layers, and the growth rate is 1.0 micrometer/hr, which resulted in a mirror-like surface morphology. The x-ray FWHM is 46 arc s. for the InAsb layer and 79 arc s. for the InAsSbP layer. PL intensity is unchanging up to 200 K and remains strong up to room temperature. We have investigated the influences of growth conditions on the material parameters as well as examined the causes for non-radiative recombination, and have deduced that it mainly originates from the InAsSb/InAsSbP heterointerfaces, though our material has demonstrated increased radiative efficiency at temperatures up to 200 K.

Descriptors :   *SUPERLATTICES, *LASERS, *PHOSPHIDES, *LONG WAVELENGTHS, *INDIUM COMPOUNDS, RADIATION, LAYERS, PARAMETERS, MATERIALS, STRUCTURES, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, SUBSTRATES, ALLOYS, ARSENIDES, ARSENIC, CLADDING, ANTIMONIDES.

Subject Categories : Inorganic Chemistry
      Lasers and Masers
      Physical Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE