Accession Number : ADA319065
Title : Wide Bandgap Transit Time Devices for Achieving High Frequency Operation.
Descriptive Note : Technical rept.,
Corporate Author : ARMY RESEARCH LAB FORT MONMOUTH NJ
Personal Author(s) : Wittstruck, Richard H.
PDF Url : ADA319065
Report Date : OCT 1996
Pagination or Media Count : 16
Abstract : The proposed device described offers a simple method for achieving the generation of high frequency signals. More particularly, the device pertains to achieving high frequency signals using semiconductor materials having increased electron saturation velocity over those values for gallium arsenide (GaAs) and silicon (Si). The use of such materials, together with submicron scale and nano-scale device processing techniques, affords devices having frequencies up to and including the terahertz band with high temperature and radiation hard characteristics. Such devices include transit-time-based oscillators for use in military and civilian radar receivers, logic devices, burglar/proximity alarm systems, biological/chemical agent detectors and secure communications modules.
Descriptors : *HIGH FREQUENCY, *SEMICONDUCTOR DEVICES, VELOCITY, MATERIALS, MILITARY EQUIPMENT, HIGH TEMPERATURE, GALLIUM ARSENIDES, COMMUNICATION EQUIPMENT, SATURATION, ELECTRONS, SCALE, SILICON, MODULES(ELECTRONICS), RADAR RECEIVERS, LOGIC DEVICES, RADIO SIGNALS, SECURE COMMUNICATIONS, RADIATION HARDENING, CHEMICAL AGENT DETECTORS, WARNING SYSTEMS.
Subject Categories : Electrical and Electronic Equipment
Distribution Statement : APPROVED FOR PUBLIC RELEASE