Accession Number : ADA319314
Title : Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices.
Descriptive Note : Final rept. 20 May 93-30 Sep 96,
Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Chaung, S. L.
PDF Url : ADA319314
Report Date : 30 SEP 1996
Pagination or Media Count : 63
Abstract : We investigate both theoretically and experimentally high speed strained semiconductor lasers. We have developed a systematic experimental procedure to obtain the key high speed parameters of a semiconductor laser based on a measurement of the amplified spontaneous emission of a laser biased below threshold. We extract the gain, refractive index change, and linewidth enhancement factor spectra and compare with a complete theoretical model for the optical properties of strained semiconductors with excellent agreement. We also extend our measurement techniques to distributed feed back lasers and show that by a careful use of both theory and experiment we can obtain these device parameters along with the important distributed feedback cavity parameters.
Descriptors : *QUANTUM WELLS, *SEMICONDUCTOR LASERS, LASER CAVITIES, EMISSION, OPTIMIZATION, ELECTROOPTICS, THRESHOLD EFFECTS, GALLIUM ARSENIDES, REFRACTIVE INDEX, FEEDBACK, INDIUM PHOSPHIDES, DISTRIBUTED AMPLIFIERS.
Subject Categories : Lasers and Masers
Distribution Statement : APPROVED FOR PUBLIC RELEASE