Accession Number : ADA319314

Title :   Semiconductor Quantum-Well Lasers and Ultrafast Optoelectronic Devices.

Descriptive Note : Final rept. 20 May 93-30 Sep 96,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Chaung, S. L.

PDF Url : ADA319314

Report Date : 30 SEP 1996

Pagination or Media Count : 63

Abstract : We investigate both theoretically and experimentally high speed strained semiconductor lasers. We have developed a systematic experimental procedure to obtain the key high speed parameters of a semiconductor laser based on a measurement of the amplified spontaneous emission of a laser biased below threshold. We extract the gain, refractive index change, and linewidth enhancement factor spectra and compare with a complete theoretical model for the optical properties of strained semiconductors with excellent agreement. We also extend our measurement techniques to distributed feed back lasers and show that by a careful use of both theory and experiment we can obtain these device parameters along with the important distributed feedback cavity parameters.

Descriptors :   *QUANTUM WELLS, *SEMICONDUCTOR LASERS, LASER CAVITIES, EMISSION, OPTIMIZATION, ELECTROOPTICS, THRESHOLD EFFECTS, GALLIUM ARSENIDES, REFRACTIVE INDEX, FEEDBACK, INDIUM PHOSPHIDES, DISTRIBUTED AMPLIFIERS.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE