Accession Number : ADA319318
Title : Final Technical Report for JSEP Fellowship Executive Summary.
Descriptive Note : Final technical rept. 1 Jul 93-30 Sep 96,
Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Wu, Warren
PDF Url : ADA319318
Report Date : 16 DEC 1996
Pagination or Media Count : 7
Abstract : Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross- sectional scanning tunneling microscopy (XSTM). This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum (UHV) system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross sections of self assembled InAs quantum dots, XSTM cross sections of quantum wires created by the strain induced lateral layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.
Descriptors : *HETEROJUNCTIONS, *ELECTRON MICROSCOPY, QUANTUM WELLS, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, FIELD EFFECT TRANSISTORS, RESONANCE, PHOTODIODES, ULTRAHIGH VACUUM, ATOMIC ENERGY LEVELS.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE