Accession Number : ADA319426
Title : AlGaN Channel Transistors for Power Management and Distribution.
Descriptive Note : Final rept. 30 Apr-30 Oct 96,,
Corporate Author : SVT ASSOCIATES INC EDEN PRAIRIE MN
Personal Author(s) : VanHove, James M.
PDF Url : ADA319426
Report Date : 30 DEC 1996
Pagination or Media Count : 36
Abstract : Contained within is the Final report of a Phase I SBIR program to develop AIGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AIGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase II Program.
Descriptors : *FIELD EFFECT TRANSISTORS, *JUNCTION TRANSISTORS, *ENERGY MANAGEMENT, *POWER DISTRIBUTION, SOURCES, ALUMINUM COMPOUNDS, MANAGEMENT, GROWTH(GENERAL), GATES(CIRCUITS), REACTIVITIES, ION BEAMS, ETCHING, NITRIDES, DRAINAGE, POWER, CHANNELS, GALLIUM COMPOUNDS, ELECTRIC CONTACTS, MOLECULAR BEAM EPITAXY.
Subject Categories : Electrical and Electronic Equipment
Electric Power Production and Distribution
Distribution Statement : APPROVED FOR PUBLIC RELEASE