Accession Number : ADA319709
Title : Scanning Microcathodoluminescence and Near-Field Optical Scanning Microscopy of Nanostructures in Semiconductors (AASERT Award).
Descriptive Note : Final rept.,
Corporate Author : WISCONSIN UNIV-MADISON
Personal Author(s) : Lagally, Max G.
PDF Url : ADA319709
Report Date : DEC 1996
Pagination or Media Count : 6
Abstract : This report briefly summarizes work completed on the above grant during the time period of June 1, 1993 to May 31, 1996. The grant, an AASERT Award to support the work of one graduate student, supplemented a larger ONR grant (N00014-90-J-1306) and expanded the effort in that grant to scanning tunneling luminescence(STL) microcathodoluminescence (micro CL), and near-field scanning optical microscopy (NSOM). The objective has been to use these new techniques for investigating local optical properties of surfaces and small structures and relating these to morphological properties and structural defects. The project has been quite successful, in that we were able to develop a functional STL capability and use it for initial studies of localized luminescence on GaAs and GaN. In addition, the objective motivated research on improved scanning technology for scanned-probe instruments, which has led to an invention disclosure and the filing of a patent application by the University.
Descriptors : *SEMICONDUCTORS, *MICROSCOPY, *OPTICAL SCANNING, *NEAR FIELD, OPTICAL PROPERTIES, PATENT APPLICATIONS, STRUCTURAL PROPERTIES, GALLIUM ARSENIDES, MORPHOLOGY, STRUCTURES, NITRIDES, DEFECTS(MATERIALS), OPTICAL ANALYSIS, CATHODOLUMINESCENCE, LUMINESCENCE.
Subject Categories : Optics
Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE