Accession Number : ADA319819

Title :   Final Technical Report for JSEP Fellowship Executive Summary (Gross-Sectional Scanning/Tunneling Microscopy Investigations of Cleaned III-V Heterostructures).

Descriptive Note : Final rept. 1 Jul 93-31 Jul 96,

Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Wu, Warren

PDF Url : ADA319819

Report Date : 16 DEC 1996

Pagination or Media Count : 7

Abstract : Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum (UHV) system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.

Descriptors :   *QUANTUM ELECTRONICS, *NANOTECHNOLOGY, SCANNING ELECTRON MICROSCOPES, HETEROJUNCTIONS, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, STRUCTURES, FIELD EFFECT TRANSISTORS, ELECTRON MICROSCOPY, RESONANCE.

Subject Categories : Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE