Accession Number : ADA319819
Title : Final Technical Report for JSEP Fellowship Executive Summary (Gross-Sectional Scanning/Tunneling Microscopy Investigations of Cleaned III-V Heterostructures).
Descriptive Note : Final rept. 1 Jul 93-31 Jul 96,
Corporate Author : ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Wu, Warren
PDF Url : ADA319819
Report Date : 16 DEC 1996
Pagination or Media Count : 7
Abstract : Fabrication technology and device sizes have reached the point where fluctuations on the atomic level may affect device performance. The need for a tool to characterize these structures has been satisfied by cross-sectional scanning tunneling microscopy (XSTM). This summary and attached thesis detail the development and application of XSTM to III-V heterostructures accomplished during the term of the JSEP Fellowship of Warren Wu. An ultra-high vacuum (UHV) system dedicated to XSTM was specifically designed and constructed as part of this work. Reported for the first time were XSTM cross-sections of self-assembled InAs quantum dots, XSTM cross-sections of quantum wires created by the strain-induced lateral-layer ordering (SILO) process as well as the first XSTM data on working device structures. These working device structures include resonant tunneling diode (RTD) structures, a quantum well infrared photodetector structure and a modulation doped field effect transistor (MODFET) structure. XSTM has proved useful in characterizing interface roughness, alloy fluctuations and individual atomic positions.
Descriptors : *QUANTUM ELECTRONICS, *NANOTECHNOLOGY, SCANNING ELECTRON MICROSCOPES, HETEROJUNCTIONS, TUNNELING(ELECTRONICS), ELECTRONIC SCANNERS, STRUCTURES, FIELD EFFECT TRANSISTORS, ELECTRON MICROSCOPY, RESONANCE.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE