Accession Number : ADA320364

Title :   SiGe Power HBT.

Descriptive Note : Progress rept. for Dec 96,

Corporate Author : M/A-COM CORPORATE RESEARCH AND DEVELOPMENT CENTER LOWELL MA

Personal Author(s) : Ziegner, B. A.

PDF Url : ADA320364

Report Date : JAN 1997

Pagination or Media Count : 3

Abstract : The objective of this program is the development and demonstration of a viable SiGe power HBT device design and associated processes that will demonstrate greater than 1 Watt of output power at 6 and 8 GHz.

Descriptors :   *BIPOLAR TRANSISTORS, *JUNCTION TRANSISTORS, HETEROJUNCTIONS, SILICON COMPOUNDS, THIN FILM RESISTORS, THIN FILM CAPACITORS.

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE