Accession Number : ADA320516
Title : Nucleon Bombarded Germanium Semiconductors, II,
Corporate Author : TECHNICAL INFORMATION SERVICE (AEC) OAK RIDGE TN
Personal Author(s) : Davis, R. E. ; Johnson, W. E. ; Lark-Horovitz, K. ; Siegel, S.
PDF Url : ADA320516
Report Date : 03 JUN 1948
Pagination or Media Count : 7
Abstract : The electrical behavior (conductivity, thermoelectric power, etc.) of germanium semiconductors can be described quantitatively once the number of carriers is known. The number of electrons (N-type conduction) or the number of holes (P-type conduction), depending on the type and number of impurities present, can be determined from Hall effect measurements. It is assumed (and made plausible by experiment) that each impurity atom releases one carrier.
Descriptors : *HALL EFFECT, *CHARGE CARRIERS, ELECTRICAL CONDUCTIVITY, GERMANIUM, SOLID STATE PHYSICS, THERMOELECTRIC POWER GENERATION, NEUTRON IRRADIATION.
Subject Categories : Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE