Accession Number : ADA320567

Title :   Microstructural Effect on the Resistivity of Thin Silver Films.

Descriptive Note : Final rept.,

Corporate Author : ARMY ARMAMENT RESEARCH DEVELOPMENT AND ENGINEERING CENTER WATERVLIET NY BENET LABS

Personal Author(s) : Soss, S. R. ; Gittleman, B. ; Tracy, D. ; Mello, K. E. ; Lu, T. -M.

PDF Url : ADA320567

Report Date : OCT 1996

Pagination or Media Count : 17

Abstract : Thin silver films were deposited using the partially ionized beam deposition technique. It was found that the resistivity of the films is strongly dependent on the incident ion energy used during film growth. The observed resistivity trend exhibits a minimum that is near the bulk value for silver. The x-ray fiber texture analysis technique was used to determine the microstructure of the films. The change in resistivity is shown to be correlated with film microstructure through the change in the fraction of grains whose surface normals are oriented randomly with respect to the substrate normal. The electronic grain boundary reflection coefficient, as extracted from the model of Mayadas and Shatzkes, is shown to also vary with the microstructure.

Descriptors :   *METAL FILMS, *ELECTRICAL RESISTANCE, MICROSTRUCTURE, THIN FILMS, DEPOSITION, IONIZATION, SILVER.

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE