Accession Number : ADA320607
Title : Planar Fully Ion-Implanted InGaAs p-i-n Photodetector.
Descriptive Note : Final rept.,
Corporate Author : GEORGE MASON UNIV FAIRFAX VA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
Personal Author(s) : Rao, Mulpuri V.
PDF Url : ADA320607
Report Date : 1993
Pagination or Media Count : 6
Abstract : Investigating the behavior of compensation implants in In-based compounds (InGaAs, InP, and InAlAs that are used in 1.2-1.6 micrometers fibre-optic communications) and their use in the fabrication of photodetectors. Approach: We have performed Fe and Co implants in n-type and Ti implants in p-type InGaAs, InAlAs and InP. Selective area high resistance regions are required in multilayer device structures (like heterojunction laser, heterojunction bipolar transistors photodetectors, etc.) that employ these three materials. Such a study is necessary with a growing interest in integrating microwave and optoelectronic devices based on these three compounds in monolithic form. The above mentioned transition metal implants were performed at both room and elevated (200 deg C) temperatures. The implants were done in both keV and MeV ranges. To obtain thick high resistance layers we have also employed multiple energy implantations. The implanted material was annealed using a halogen lamp rapid thermal annealing station. To protect the surface during annealing, a 50 nm thick Si3N4 cap was used. The SIMS measurements were performed in the as-implanted and the annealed material to monitor the implant atom density depth profiles. Conventional two-probe I-V measurements were performed after depositing and alloying the Au-Ge/Au or Au-Zn/Au ohmic contacts on the n- and p-type materials, respectively. Polaron electrochemical C-V depth profiling measurements were done to get carrier concentration depth profiles in MeV energy Fe or Ti implanted InP. The RBS measurements were performed to evaluate the lattice quality of the as-implanted and annealed material.
Descriptors : *GALLIUM ARSENIDES, *PHOTODETECTORS, *PIN DIODES, *INDIUM COMPOUNDS, ANNEALING, TRANSITION METALS, ELECTROOPTICS, MONITORING, LAYERS, MATERIALS, RESISTANCE, HETEROJUNCTIONS, ENERGY, FABRICATION, ELECTROCHEMISTRY, CHARGE CARRIERS, ALLOYS, LASERS, DEPTH, ION IMPLANTATION, IRON, PROFILES, PLANAR STRUCTURES, ZINC, TITANIUM, ALUMINUM ARSENIDES, N TYPE SEMICONDUCTORS, INDIUM PHOSPHIDES, GOLD, COMPENSATION, GERMANIUM, BIPOLAR TRANSISTORS, P TYPE SEMICONDUCTORS, COBALT, METAL CONTACTS.
Subject Categories : Inorganic Chemistry
Electrical and Electronic Equipment
Miscellaneous Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE