Accession Number : ADA320723
Title : Spatially Selective Growth and Modification of Wide Bandgap Semiconductor Surfaces.
Descriptive Note : Final rept.,
Corporate Author : GEORGIA STATE UNIV ATLANTA
Personal Author(s) : Thoms, Brian D.
PDF Url : ADA320723
Report Date : 29 JAN 1997
Pagination or Media Count : 17
Abstract : During the term of this research grant, design and construction of a state-of-the-art surface science apparatus was performed. In particular, an apparatus was built which is capable of addressing the issues unique to wide bandgap semiconductor surfaces and their processing into electronic devices. The superlative properties of these materials are accompanied by considerable challenges in their investigation. Among the design requirements established for this chamber were the ability to heat to a temperature of 1050 deg C, the ability of to employ novel cleaning techniques without contaminating analysis equipment, and the ability to detect and characterize surface hydrogen. The apparatus design meets these constraints through the use of an electron beam sample heater, a high-temperature sample mounting puck, an interchamber sample translation system, a dedicated surface preparation chamber, and the best performance high resolution electron energy loss spectrometer available. With construction nearly complete, a research program investigating surface processes critical to the use of wide bandgap semiconductors in electronic devices is being initiated.
Descriptors : *SEMICONDUCTORS, *SURFACES, PREPARATION, SPECTROSCOPY, GROWTH(GENERAL), ELECTRONIC EQUIPMENT, ENERGY GAPS, HYDROGEN, ELECTRON BEAMS, SURFACE PROPERTIES, BROADBAND, TRANSLATIONS, CLEANING, CONTAMINATION, HEAT, CHAMBERS, SPECTROMETERS.
Subject Categories : Electrical and Electronic Equipment
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE