Accession Number : ADA320923

Title :   Multi-State Quantum Storage Devices.

Descriptive Note : Final rept. 15 Aug 93-14 Aug 96,

Corporate Author : TEXAS UNIV AT AUSTIN DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s) : Powers,

PDF Url : ADA320923

Report Date : 27 JAN 1997

Pagination or Media Count : 18

Abstract : The purpose of this AASERT grant was to extend the work on resonant tunneling devices to include a new structure which has shown evidence of zero-bias memory switching and multi-state behavior. This device is known as a quantum storage device or QSD. This device features a triple barrier resonant tunneling device, yielding a three terminal device. Under the AASERT, extensive simulations were performed using the Schrodinger-Poisson and Wigner formalisms. Optimization of the QSD design to achieve high on-off resistance ratios is a main focus of the parameter study. Results to date will be described.

Descriptors :   *QUANTUM ELECTRONICS, COMPUTERIZED SIMULATION, OPTIMIZATION, COMPUTER AIDED DESIGN, ELECTRON DENSITY, QUANTUM WELLS, TUNNELING(ELECTRONICS), CURRENT DENSITY, ELECTRICAL RESISTANCE, ALUMINUM ARSENIDES, SCHOTTKY BARRIER DEVICES, DIODES(ELECTRON TUBES).

Subject Categories : Electrical and Electronic Equipment

Distribution Statement : APPROVED FOR PUBLIC RELEASE