Accession Number : ADA321076

Title :   Ultra-High BandWidth Tunneling Injection Lasers.

Descriptive Note : Final rept. 20 Jan 93-30 Sep 96,

Corporate Author : MICHIGAN UNIV ANN ARBOR DEPT OF ELECTRICAL ENGINEERING AND COMPUTER SCIENCE

Personal Author(s) : Bhattacharya, Pallab

PDF Url : ADA321076

Report Date : 30 DEC 1996

Pagination or Media Count : 59

Abstract : In conventional quantum well lasers, carriers are injected into the quantum wells with quite high energies. We have invented a new quantum well laser in which electrons are injected into the quantum well ground state through tunneling. The tunneling injection lasers are shown to have negligible gain compression, superior high temperature performance, lower Auger recombination and wavelength chirp, and better modulation characteristics when compared to conventional lasers. The underlying physical principles behind the superior performance are also explored and calculations and measurements of relaxation times in quantum wells have been made. Experimental results have been obtained for lasers made with a variety of material systems, InGaAs/GaAs/AlGaAs, InGaAs/GaAs/InGaAsP, and InGaAs/InGaAsP/InP, for different applications. Both single quantum well and multiple quantum well tunneling injection lasers are demonstrated. These lasers outperform any other semiconductor laser in terms of modulation bandwidth and gain compression. f(-3dB) is approximately 50 GHz and f(-3dB)max = 98 GHz have been measured. This device is now being investigated on a worldwide basis, and the tunneling mechanism has also been incorporated in VCSELs.

Descriptors :   *INJECTION LASERS, *QUANTUM WELLS, LASER CAVITIES, TUNABLE LASERS, ELECTRON DENSITY, TUNNELING(ELECTRONICS), FREQUENCY MODULATION, CURRENT DENSITY, CHARGE CARRIERS, OPTICAL COMMUNICATIONS, LASER BEAMS, GALLIUM ARSENIDE LASERS.

Subject Categories : Electrical and Electronic Equipment
      Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE