Accession Number : ADA321098

Title :   Ultra-Low Threshold Index-Confined Microcavity Lasers.

Descriptive Note : Final rept. 1 Jul-31 Oct 96,

Corporate Author : TEXAS UNIV AT AUSTIN MICROELECTRONICS RESEARCH CENTER

Personal Author(s) : Deppe, Dennis

PDF Url : ADA321098

Report Date : DEC 1996

Pagination or Media Count : 4

Abstract : This project first demonstrated ultra-low threshold lasing with a lower n-type AlAs/GaAs DBR and an upper dielectric DBR. The threshold was reduced to ^40 micro A for 3 micrometers laterally sized devices. This remains the lowest threshold that has been reproducibly achieved in the oxide-confined VCSELs to date. Oxide confinement is a key in achieving ultra low threshold. Studies have also shown that diffraction loss due to the optical penetration depth of the lasing mode into the lower AlAs/GaAs DBR is a real problem when the device size is made smaller than -3 micrometers diameter. The thickness of the oxide aperture layer is an important parameter in the mode confinement, and if the aperture is too thin higher efficiency is achieved at the expense of a large mode area (loss of optical confinement).

Descriptors :   *LASER CAVITIES, *N TYPE SEMICONDUCTORS, OPTICAL PROPERTIES, THICKNESS, THRESHOLD EFFECTS, GALLIUM ARSENIDES, DIELECTRICS, COSTS, PENETRATION, DIFFRACTION, OXIDES, ALUMINUM, ARSENIDES, THINNESS, LOSSES, CONFINEMENT(GENERAL), REFLECTORS.

Subject Categories : Lasers and Masers
      Inorganic Chemistry

Distribution Statement : APPROVED FOR PUBLIC RELEASE