Accession Number : ADA321272
Title : Luminescence in Synthesized Semiconductor and Dielectric Materials.
Descriptive Note : Final rept. 1 May 94-30 Apr 96,
Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF ELECTRICAL AND COMPUTER ENGINEERI NG
Personal Author(s) : Kolbas, R. M.
PDF Url : ADA321272
Report Date : 20 SEP 1996
Pagination or Media Count : 7
Abstract : The overall objective of this research is to identify and control the basic physical mechanisms responsible for light emission in synthesized semiconductor and dielectric materials. Investigations are to be performed in order to develop new device concepts and provoke new ideas for optoelectronic applications. Specifically this research involves: (1) analyzing the physical origin of light emission from nanometer-size semiconductor particles; (2) studying the light emission of rare earth dopants in semiconductors and dielectrics and; (3) determining the feasibility of developing light emitting devices based upon the novel properties of such materials.
Descriptors : *SYNTHESIS, *DIELECTRICS, *SEMICONDUCTORS, *LUMINESCENCE, EMISSION, ELECTROOPTICS, PHYSICAL PROPERTIES, COMPOSITE MATERIALS, LIGHT, DOPING, RARE EARTH ELEMENTS.
Subject Categories : Electrooptical and Optoelectronic Devices
Laminates and Composite Materials
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE