Accession Number : ADA321311
Title : Ultrafast Electronic Processes in Semiconductor Nanostructures.
Descriptive Note : Final rept. 1 Nov 92-31 Oct 96,
Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF PHYSICS
Personal Author(s) : Das Sarma, Sankar
PDF Url : ADA321311
Report Date : DEC 1996
Pagination or Media Count : 6
Abstract : We have made significant progress in our understanding of ultrafast electronic processes in semiconductor nanostructures by developing a detailed theory for electron-phonon many body interaction processes in GaAs quantum wires of 10-100 nanometers cross-sectional dimensions. Specifically, we have taken into account plasmon-plasmon and quasiparticle-phonon coupling effects in calculating femtosecond hot electron relaxation phenomena, showing that many-body coupling could lead to substantial enhancement in the energy loss rates of ultrafast electrons confined in semiconductor quantum wire nanostructures. We have also developed a quantitative theory, agreeing very well with experimental results, for electronic tunneling in GaAs-AlGaAs double quantum well structures taking Coulomb interaction induced many-body effects into account. We published 37 papers and produced 2 Ph.d.s under this project.
Descriptors : *SEMICONDUCTORS, *QUANTUM ELECTRONICS, COUPLING(INTERACTION), PLASMAS(PHYSICS), ELECTRON DENSITY, QUANTUM THEORY, GALLIUM ARSENIDES, ELECTRON ENERGY, MICROELECTRONICS, PHONONS, NANOTECHNOLOGY.
Subject Categories : Electrical and Electronic Equipment
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE