Accession Number : ADA321311

Title :   Ultrafast Electronic Processes in Semiconductor Nanostructures.

Descriptive Note : Final rept. 1 Nov 92-31 Oct 96,

Corporate Author : MARYLAND UNIV COLLEGE PARK DEPT OF PHYSICS

Personal Author(s) : Das Sarma, Sankar

PDF Url : ADA321311

Report Date : DEC 1996

Pagination or Media Count : 6

Abstract : We have made significant progress in our understanding of ultrafast electronic processes in semiconductor nanostructures by developing a detailed theory for electron-phonon many body interaction processes in GaAs quantum wires of 10-100 nanometers cross-sectional dimensions. Specifically, we have taken into account plasmon-plasmon and quasiparticle-phonon coupling effects in calculating femtosecond hot electron relaxation phenomena, showing that many-body coupling could lead to substantial enhancement in the energy loss rates of ultrafast electrons confined in semiconductor quantum wire nanostructures. We have also developed a quantitative theory, agreeing very well with experimental results, for electronic tunneling in GaAs-AlGaAs double quantum well structures taking Coulomb interaction induced many-body effects into account. We published 37 papers and produced 2 Ph.d.s under this project.

Descriptors :   *SEMICONDUCTORS, *QUANTUM ELECTRONICS, COUPLING(INTERACTION), PLASMAS(PHYSICS), ELECTRON DENSITY, QUANTUM THEORY, GALLIUM ARSENIDES, ELECTRON ENERGY, MICROELECTRONICS, PHONONS, NANOTECHNOLOGY.

Subject Categories : Electrical and Electronic Equipment
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE