Accession Number : ADA321501

Title :   Low Voltage Electron Beam Lithography.

Descriptive Note : Final rept. 1 Sep 92-31 Aug 96,

Corporate Author : STANFORD UNIV CA

Personal Author(s) : Pease, R. F. ; Baum, Aaron ; Schneider, James

PDF Url : ADA321501

Report Date : 17 DEC 1996

Pagination or Media Count : 38

Abstract : The properties of negative electron affinity (NEA) photocathodes have been evaluated as sources in electron beam instrumentation. This characterization has been accomplished in two stages. The first stage, carried out in modified night vision tubes, established that these cathodes have brightness of 1 x 10(exp 8) A/cu cm-Sr and energy spreads as low as 50meV. The second stage, still in progress, entailed the construction of a demountable UHV electron gun in order to demonstrate cathode lifetime and stability. Thus for, the cathode his routinely been operated at currents as high as 90nA with no significant delay in emission.

Descriptors :   *SOLID STATE ELECTRONICS, *ELECTRON BEAM LITHOGRAPHY, LIFE EXPECTANCY(SERVICE LIFE), NIGHT VISION DEVICES, PHOTOCATHODES.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys

Distribution Statement : APPROVED FOR PUBLIC RELEASE