Accession Number : ADA321501
Title : Low Voltage Electron Beam Lithography.
Descriptive Note : Final rept. 1 Sep 92-31 Aug 96,
Corporate Author : STANFORD UNIV CA
Personal Author(s) : Pease, R. F. ; Baum, Aaron ; Schneider, James
PDF Url : ADA321501
Report Date : 17 DEC 1996
Pagination or Media Count : 38
Abstract : The properties of negative electron affinity (NEA) photocathodes have been evaluated as sources in electron beam instrumentation. This characterization has been accomplished in two stages. The first stage, carried out in modified night vision tubes, established that these cathodes have brightness of 1 x 10(exp 8) A/cu cm-Sr and energy spreads as low as 50meV. The second stage, still in progress, entailed the construction of a demountable UHV electron gun in order to demonstrate cathode lifetime and stability. Thus for, the cathode his routinely been operated at currents as high as 90nA with no significant delay in emission.
Descriptors : *SOLID STATE ELECTRONICS, *ELECTRON BEAM LITHOGRAPHY, LIFE EXPECTANCY(SERVICE LIFE), NIGHT VISION DEVICES, PHOTOCATHODES.
Subject Categories : Mfg & Industrial Eng & Control of Product Sys
Distribution Statement : APPROVED FOR PUBLIC RELEASE