Accession Number : ADA321520

Title :   Study of Graded Channels in MODFETs on InP Substrates.

Descriptive Note : Final rept. 1 May 93-30 Apr 96,

Corporate Author : CORNELL UNIV ITHACA NY DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Martin, Glenn ; Eastman, Lester

PDF Url : ADA321520

Report Date : DEC 1996

Pagination or Media Count : 26

Abstract : Results from this contract was a successful demonstration for the first time of InP-based MODFETs operating above 125 deg C with minimal DC and RF degradation with record two dimensional electron sheet densities (>8.0 x 10(exp 12) /sq cm) The MODFET structure was double-doped and double-strained with a parabolically graded channel. To achieve this final result we performed fundamental experiments during the duration of the grant to study the spacer layer thickness, Schottky barrier enhancements and stress compensation schemes.

Descriptors :   *SUBSTRATES, *FIELD EFFECT TRANSISTORS, *INDIUM PHOSPHIDES, STRESSES, DENSITY, DEGRADATION, LAYERS, ELECTRONS, PARABOLAS, DOPING, COMPENSATION, SCHOTTKY BARRIER DEVICES, MODULATION, DIRECT CURRENT, RADIOFREQUENCY, CHANNELS, SPACERS.

Subject Categories : Electrical and Electronic Equipment
      Inorganic Chemistry
      Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE