Accession Number : ADA321632
Title : Monolithic P-I-n Multiple Quantum Well (MQW) Photorefractive Devices.
Descriptive Note : Final rept. May 95-May 96,
Corporate Author : CORETEK INC BEDFORD MA
Personal Author(s) : Tayebati, Parviz ; Hantzis, Christos
PDF Url : ADA321632
Report Date : DEC 1996
Pagination or Media Count : 14
Abstract : In this paper we report a monolithic p-i-n multiple quantum-well (MOW) GaAlAs photorefractive device operating in reflection mode. The device structure consists of a photorefractive structure grown with low temperature grown (LTG)-GaAlAs charge blocking layers on top of a 20 period n-type GaAlAs/AlAs quarter wave stack mirror. The device operates by double passing mutually coherent beams through the photorefractive structure exhibiting nearly 0.23% input diffraction efficiency. The writing energy of approximately 2OnJ/sq cm is nearly seven (7) times better than those of previously reported devices.
Descriptors : *QUANTUM WELLS, *MONOLITHIC STRUCTURES(ELECTRONICS), *PIN DIODES, MIRRORS, LOW TEMPERATURE, LAYERS, GALLIUM ARSENIDES, ALUMINUM GALLIUM ARSENIDES, ENERGY, COHERENCE, REFLECTION, DIFFRACTION, ALUMINUM ARSENIDES, BLOCKING, PHOTOREFRACTIVE MATERIALS, STACKING, WAVES.
Subject Categories : Electrooptical and Optoelectronic Devices
Electrical and Electronic Equipment
Quantum Theory and Relativity
Distribution Statement : APPROVED FOR PUBLIC RELEASE