Accession Number : ADA321844
Title : Low Temperature Epitaxial Growth of CoGe(001)/GaAs(100) Films Using the Partially Ionized Beam Deposition Technique,
Descriptive Note : Final rept.,
Corporate Author : ARMY ARMAMENT RESEARCH DEVELOPMENT AND ENGINEERING CENTER WATERVLIET NY BENET LABS
Personal Author(s) : Mello, K. E. ; Soss, S. R. ; Murarka, S. P. ; Lu, R.-M. ; Lee, S. L.
PDF Url : ADA321844
Report Date : NOV 1996
Pagination or Media Count : 16
Abstract : The partially ionized beam (PIB) deposition technique was used to deposit CoGe2(001) thin films heteroepitaxially on GaAs(100) substrates for the first time. The epitaxial arrangement was CeGe2(001)/GaAs(100). It was found that the best epitaxy was obtained with an ion energy around 1100 eV and with a substrate temperature of 280 deg C. The wafers were treated only by immersion in HF:H20 1:10 immediately prior to deposition. Contacts grown at the optimal epitaxial formation conditions displayed ohmic behavior, while contacts grown at higher or lower substrate temperatures had rectifying behavior. Epitaxial formation of CeGe2, a high-melting point, low resistivity cobalt germanide phase, offers the possibility of forming a stable contact to n-GaAs.
Descriptors : *EPITAXIAL GROWTH, GALLIUM ARSENIDES, SUBSTRATES, DEPOSITION, COBALT COMPOUNDS, ELECTRIC CONTACTS, GERMANIUM COMPOUNDS.
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE