Accession Number : ADA321856
Title : Semiconductor Laser Low Frequency Noise Characterization.
Descriptive Note : Final rept. Nov 91-Jun 95,
Corporate Author : JET PROPULSION LAB PASADENA CA TIME AND FREQUENCY SYSTEMS RESEARCH GROUP
Personal Author(s) : Maleki, Lute ; Logan, Ronald T.
PDF Url : ADA321856
Report Date : DEC 1996
Pagination or Media Count : 108
Abstract : This work summarizes the efforts in identifying the fundamental noise limit in semiconductor optical sources (lasers) to determine the source of 1/F noise and it's associated behavior. In addition, the study also addresses the effects of this 1/F noise on RF phased arrays. The study showed that the 1/F noise in semiconductor lasers has an ultimate physical limit based upon similar factors to fundamental noise generated in other semiconductor and solid state devices. The study also showed that both additive and multiplicative noise can be a significant detriment to the performance of RF phased arrays especially in regard to very low sidelobe performance and ultimate beam steering accuracy. The final result is that a noise power related term must be included in a complete analysis of the noise spectrum of any semiconductor device including semiconductor lasers.
Descriptors : *SEMICONDUCTOR LASERS, *NOISE(ELECTRICAL AND ELECTROMAGNETIC), LASER CAVITIES, FREQUENCY MODULATION, SIGNAL TO NOISE RATIO, SEMICONDUCTORS, LASER BEAMS, PHOTONICS, BEAM STEERING, RADIOFREQUENCY, LOW FREQUENCY, SIDELOBES, PHASED ARRAYS, LASER AMPLIFIERS, NOISE MODULATION.
Subject Categories : Lasers and Masers
Electricity and Magnetism
Distribution Statement : APPROVED FOR PUBLIC RELEASE