Accession Number : ADA322015
Title : Epitaxial Growth and Electro-Optical Properties of Metal GaAs Superlattices.
Descriptive Note : Final technical rept. 1 Jun 90-31 May 93,
Corporate Author : CALIFORNIA UNIV LOS ANGELES DEPT OF ELECTRICAL ENGINEERING
Personal Author(s) : Wang, Kang L. ; Williams, R. S.
PDF Url : ADA322015
Report Date : 30 MAY 1995
Pagination or Media Count : 17
Abstract : Under the SDIO/IST support (grant N00014-90-J-1761), we have made progress in the investigation of the metal systems that are thermodynamically stable on GaAs. Successful growth of the single phase PtGa2 and CoGa on GaAs has been demonstrated by MOCVD (metal organic chemical vapor deposition) using mixed-metal organometallic precursors of limited volatility and by MBE (molecular beam epitaxy). Fundamental understanding of these thermodynamically stable compounds has been obtained. Our accomplishments include the studies of the stability, the growth process, the chemical, physical, and electrical properties of metal/GaAs systems.
Descriptors : *METALS, *ELECTROOPTICS, *GALLIUM ARSENIDES, *SUPERLATTICES, *EPITAXIAL GROWTH, STABILITY, CHEMICAL PROPERTIES, PHYSICAL PROPERTIES, THERMODYNAMICS, ORGANOMETALLIC COMPOUNDS, CHEMICAL VAPOR DEPOSITION, ELECTRICAL PROPERTIES, VOLATILITY, PLATINUM, COBALT, MOLECULAR BEAM EPITAXY.
Subject Categories : Inorganic Chemistry
Electrooptical and Optoelectronic Devices
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE