Accession Number : ADA322246
Title : Microelectronic Radiation Hardening Process and Design Development, Test, and Evaluation.
Descriptive Note : Technical rept. 4 Apr 91-15 Jan 96,
Corporate Author : SFA INC LANDOVER MD
Personal Author(s) : McMarr, Patrick ; Revesz, Akos ; Lawrence, Reek
PDF Url : ADA322246
Report Date : 01 MAR 1997
Pagination or Media Count : 49
Abstract : Radiation induced charge trapping versus Buried Oxide (BOX) thickness on various Separation by Implantation (SIMOX) buried oxides has been determined. An inflection point has been observed in the voltage shift vs. buried oxide thickness relationship. As such, the radiation induced voltage shifts for thin buried oxides are greater than what could be expected from a simple square law relationship. These results can be explained by the location and magnitude of the radiation induced oxide charge centroid and its relationship to the BOX thickness. The location of the centroid for trapped positive charge is dependent on the radiation induced hole mobility, which is related to SIMOX processing as well as on geometry and charge saturation. Photoinjection was used to study the charge trapping properties of high temperature oxidation (HITOX) SIMOX buried oxides, provided by two independent vendors. After electron injection, the electron trapping per area for both HITOX material sources was found to be larger than their respective standard (control) SIMOX structures. Photo Injection, Buried Oxide, Oxide Charge Centroid, Electron Capture Cross Section, High Temperature Oxidation, Separation by Implantation of Oxygen.
Descriptors : *ION IMPLANTATION, *SOLID STATE CHEMISTRY, *RADIATION HARDENING, THIN FILMS, TRAPPING(CHARGED PARTICLES), CROSS SECTIONS, MICROELECTRONICS, SEPARATION, ELECTRON CAPTURE, SILICON ON INSULATOR.
Subject Categories : Physical Chemistry
Distribution Statement : APPROVED FOR PUBLIC RELEASE