Accession Number : ADA323736

Title :   Growth of Hg-Based Cuprate Films on Lanthanum-Aluminate Using Fast-Temperature Ramping Hg-Vapor Annealing.

Descriptive Note : Technical rept. Sep 95-Sep 96,

Corporate Author : ARMY RESEARCH LAB FORT MONMOUTH NJ

Personal Author(s) : Yun, Sangho H. ; Wu, Judy Z. ; Tidrow, Steven C. ; Eckart, Donald W.

PDF Url : ADA323736

Report Date : MAR 1997

Pagination or Media Count : 14

Abstract : Fast temperature ramping Hg vapor annealing (FTRA) process has been used for growth of superconducting Hg-based cuprate thin films on (100) LaAlO3 substrates. The film/substrate interface chemical reactions and the formation of CaHgO2 impurity phase have been effectively reduced with adoption of FTRA process. Zero-resistance superconducting transition temperature of 128 deg K and critical current density of up to 1.4 x 10(exp 6) A/cu cm at 77 K and 2.5 x 10(exp 5) A/cu cm at 110 deg K and zero field have been obtained.

Descriptors :   *THIN FILMS, *DOPING, *HIGH TEMPERATURE SUPERCONDUCTORS, *SUPERCONDUCTIVITY, ANNEALING, CURRENT DENSITY, VAPOR DEPOSITION, SUBSTRATES, CRITICAL TEMPERATURE, TRANSITION TEMPERATURE, MERCURY COMPOUNDS, COPPER OXIDES, LANTHANUM COMPOUNDS.

Subject Categories : Electricity and Magnetism

Distribution Statement : APPROVED FOR PUBLIC RELEASE