Accession Number : ADA324173

Title :   Metal-Semiconductor-Metal Photodetectors for Optical Interconnect Applications.

Descriptive Note : Final rept. Oct 91-Sep 95,

Corporate Author : ROME LAB ROME NY

Personal Author(s) : Haas, Franz

PDF Url : ADA324173

Report Date : MAR 1997

Pagination or Media Count : 31

Abstract : A method of lowering the dark current of silicon metal-semiconductor-metal (MSM) photodetectors was developed. MSM photodetectors have been the focus of much recent research. The monolithic design, integratability with standard VLSI circuitry, high speed performance, and applicability to 2-D array layouts make them a good candidate for optical interconnect architectures. In many optical interconnect schemes, the combination of low optical power emission from optical sources, low cost and low efficiency optical guiding or focusing systems and realistic alignment limitations often result in low optical signal level reaching the photodetector. To maintain an adequate signal to noise ratio for high data rates, the noise contributed by each component in the interconnect scheme must be minimized. This report reviews MSM photodetector operating characteristics, fabrication, and an analysis of a method of reducing the detector dark current.

Descriptors :   *CIRCUIT INTERCONNECTIONS, *PHOTODETECTORS, LOW POWER, EMISSION, OPTICAL DETECTION, LOW COSTS, SIGNAL TO NOISE RATIO, VERY LARGE SCALE INTEGRATION, SEMICONDUCTOR LASERS, SILICON, ELECTRIC CURRENT, MONOLITHIC STRUCTURES(ELECTRONICS), LOW NOISE.

Subject Categories : Electrical and Electronic Equipment
      Mfg & Industrial Eng & Control of Product Sys
      Optical Detection and Detectors

Distribution Statement : APPROVED FOR PUBLIC RELEASE