Accession Number : ADA324216
Title : Expitaxial Growth of SiC Using MBE. Phase I.
Descriptive Note : Final rept. 23 Sep 94-27 Dec 96,
Corporate Author : UNIVERSAL ENERGY SYSTEMS INC DAYTON OH
Personal Author(s) : Rai, Amarendra K.
PDF Url : ADA324216
Report Date : APR 1997
Pagination or Media Count : 28
Abstract : This report addresses the development of molecular beam epitaxy technique for the growth of SiC thin film. In the course of this work, a molecular beam epitaxy system, Riber 32 GSMBE, was installed at the University of Cincinnati. The details of the MBE system are described in this report. Two preliminary experiments were carried out to demonstrate the epitaxial growth of SiC thin film. In the first experiment a Si-on-Insulator (S 0I) wafer was used as the substrate. The top Si layer of SOI was carbonized by rapid thermal chemical vapor deposition. F%urther growth of SiC on the carbonized layer was done by pyrolysis of silacyclobutane (SCB) in the MBE chamber. The second experiment utilized a Si wafer as the substrate and both carbonization and essential SiC growth was done in the MBE chamber. In situ reflection high energy electron diffraction (RHEED) experiments were performed to determine the epitaxial nature and crystalline quality of the SiC films. The chemical composition and film thicknesses were also determined using secondary ion mass spectroscopy (SIMS). It is concluded that epitaxial SiC growth can be accomplished with MBE technique with minimal (<1%) impurity concentration.
Descriptors : *SILICON CARBIDES, *MOLECULAR BEAM EPITAXY, THIN FILMS, EPITAXIAL GROWTH, SUBSTRATES, MASS SPECTROSCOPY, QUALITY CONTROL, CONCENTRATION(COMPOSITION), SILICON ON INSULATOR.
Subject Categories : Physical Chemistry
Atomic and Molecular Physics and Spectroscopy
Distribution Statement : APPROVED FOR PUBLIC RELEASE