Accession Number : ADA324603

Title :   1996 Spring MRS Meeting, Symposium B: Defects and Interfaces in Lattice-Mismatched Semiconductor Heterostructures,

Corporate Author : IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Personal Author(s) : Mooney, P. M.

PDF Url : ADA324603

Report Date : 10 APR 1996

Pagination or Media Count : 7

Abstract : Defects and Interfaces in Latice-Mismatched Heterostructures was considered a great success by all concerned. The symposium emphasized applications of lattice-mismatched semiconductor heterostructures for state of the art electronic and optoelectronic devices included blue green lasers fabricated from II-VI semiconductors, various quantum structures fabricated with III-V semiconductors, and high speed field effect transistors (FETs) utilizing strain Si and SiGe layers on relaxed SiGe buffer layers.

Descriptors :   *HETEROJUNCTIONS, *SEMICONDUCTOR LASERS, *DEFECT ANALYSIS, SYMPOSIA, ELECTROOPTICS, FIELD EFFECT TRANSISTORS, GROUP III COMPOUNDS, GROUP V COMPOUNDS, SILICON COMPOUNDS, GROUP II-VI COMPOUNDS, BUFFERS(CHEMISTRY), GERMANATES.

Subject Categories : Lasers and Masers
      Electrooptical and Optoelectronic Devices

Distribution Statement : APPROVED FOR PUBLIC RELEASE