Accession Number : ADA324705

Title :   Vapour Phase Growth of Thick Monocrystalline GaN Epitaxial Layers by Sandwich-Method.

Descriptive Note : Interim technical rept.,

Corporate Author : EUROPEAN RESEARCH OFFICE LONDON (UNITED KINGDOM)

Personal Author(s) : Mokhov, E. N. ; Vodacov, Yu. A. ; Roenkov, A. D. ; Baranov, P. G. ; Boiko, M. E.

PDF Url : ADA324705

Report Date : FEB 1997

Pagination or Media Count : 17

Abstract : Comparison studies of the crystal quality of SiC substrates grown by Lely method and sublimation sandwich method (SSM) was conducted. SSM-substrates was shown to have considerably promise for high quality GaN epilayers growth. Conditions of the surface treatment of the SiC substrates were optimized for GaN epilayers growth. The best results were reached on very close to (0001) Si-substrate surfaces etched by sublimation technique. Monocrystalline GaN layers was shown to may be grown on the SiC substrates without any buffer layer at temperatures 1150-1200 deg C. Very high growth rates of the GaN epilayers up to 1 mm/h is possible. In result heteroepitaxial layers of the large area (more than 10 sq. mm) and thickness up to 200 microns were grown by SSM.

Descriptors :   *EPITAXIAL GROWTH, *SILICON CARBIDES, *SANDWICH CONSTRUCTION, THICKNESS, SURFACE FINISHING, SINGLE CRYSTALS, SUBSTRATES, VAPOR PHASES, NITRIDES, SUBLIMATION, GALLIUM COMPOUNDS, BUFFERS(CHEMISTRY), UNITED KINGDOM.

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE