Accession Number : ADA324733

Title :   Engineered GaN Substrates.

Descriptive Note : Progress rept. no. 2.

Corporate Author : CBL CORP REDWOOD CITY CA

PDF Url : ADA324733

Report Date : 09 SEP 1996

Pagination or Media Count : 9

Abstract : This the second report of CBL's progress on its Phase 1 SBIR contract. During the first reporting period, CBL was focused on establishing a working company structure. This included hiring personnel, developing a business structure and detailing a research plan. In this period CBL has begun conducting GaN crystal growth and fundamental etching experiments. The goal of this SBIR funded project is to develop an in-situ etching technique for substrate removal; however, while the process is in the design phase we have conducted ex-situ etching studies for post growth substrate removal. These results are discussed in this report.

Descriptors :   *EPITAXIAL GROWTH, *SUBSTRATES, *ETCHED CRYSTALS, CRYSTAL LATTICES, PHOTOLUMINESCENCE, X RAY DIFFRACTION, ETCHING, X RAY SPECTRA, RESEARCH MANAGEMENT, SILICON CARBIDES, GALLIUM COMPOUNDS.

Subject Categories : Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE