Accession Number : ADA324733
Title : Engineered GaN Substrates.
Descriptive Note : Progress rept. no. 2.
Corporate Author : CBL CORP REDWOOD CITY CA
PDF Url : ADA324733
Report Date : 09 SEP 1996
Pagination or Media Count : 9
Abstract : This the second report of CBL's progress on its Phase 1 SBIR contract. During the first reporting period, CBL was focused on establishing a working company structure. This included hiring personnel, developing a business structure and detailing a research plan. In this period CBL has begun conducting GaN crystal growth and fundamental etching experiments. The goal of this SBIR funded project is to develop an in-situ etching technique for substrate removal; however, while the process is in the design phase we have conducted ex-situ etching studies for post growth substrate removal. These results are discussed in this report.
Descriptors : *EPITAXIAL GROWTH, *SUBSTRATES, *ETCHED CRYSTALS, CRYSTAL LATTICES, PHOTOLUMINESCENCE, X RAY DIFFRACTION, ETCHING, X RAY SPECTRA, RESEARCH MANAGEMENT, SILICON CARBIDES, GALLIUM COMPOUNDS.
Subject Categories : Crystallography
Distribution Statement : APPROVED FOR PUBLIC RELEASE