Accession Number : ADA324758

Title :   Growth, Characterization and Device Development in Monocrystalline Diamond Films.

Descriptive Note : Quarterly rept. 1 Jan-31 Mar 97,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF PHYSICS

Personal Author(s) : Davis, R. F. ; Nemanich, R. J. ; Sitar, Z.

PDF Url : ADA324758

Report Date : MAR 1997

Pagination or Media Count : 21

Abstract : Real time in-situ laser reflectometry was used to investigate changes in surface morphology observed during the nucleation of oriented diamond on Ni in a hot filament chemical vapor deposition reactor. Characteristic features observed in the intensities of reflected and scattered light were interpreted by comparison with scanning electron micrographs of the diamond seeded substrates quenched at sequential stages of the process. Based on this analysis, a process was developed in which the scattered light signal was used as a steering parameter. Oriented nucleation and growth of diamond on Ni was repeatedly achieved using this process. The evolution from diamond surfaces to metal-diamond interfaces has also been studied. The electron affinity and the Schottky barrier height of Zr and Cu films a few A thick and deposited in UHV onto IIb diamond substrates cleaned by different anneals and plasma treatments in UHV were correlated. The initial surfaces were terminated with oxygen or free of chemisorbed species. UPS allowed the determination of a positive electron affinity or an NEA before and after metal deposition. The Schottky barrier height changed little in the presence or absence of chemisorbed species at the interface. An NEA was observed for Zr on diamond independent of the surface termination. For Cu, the surface cleaning prior to metal deposition had a more significant effect. The Schottky barrier height changed strongly depending on the chemical species at the interface. An NEA was only detected for Cu on clean diamond surfaces. The differences between Zr on one hand and Cu on the other are correlated with differences in interface chemistry and structure.

Descriptors :   *FILMS, *DIAMONDS, *SINGLE CRYSTALS, *NUCLEATION, *SCHOTTKY BARRIER DEVICES, METALS, LIGHT SCATTERING, CHEMICALS, INTERFACES, PLASMAS(PHYSICS), ELECTRONIC SCANNERS, MORPHOLOGY, CHEMICAL VAPOR DEPOSITION, EPITAXIAL GROWTH, SUBSTRATES, LASERS, SEQUENCES, ELECTRON MICROSCOPY, OXYGEN, CHEMISTRY, ELECTRONS, SURFACE PROPERTIES, COPPER, ZIRCONIUM, NICKEL, CLEANING, SEEDING.

Subject Categories : Inorganic Chemistry
      Physical Chemistry
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE