Accession Number : ADA324907
Title : Theoretical Modeling of Linear Absorption Coefficients in Si/Si1-xGex Multiple Quantum Well Photodetectors.
Descriptive Note : Master's thesis,
Corporate Author : AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH
Personal Author(s) : Greene, Kevin D.
PDF Url : ADA324907
Report Date : DEC 1996
Pagination or Media Count : 120
Abstract : Si/Sisub(1-x)Gesubx MQW Infrared Photodetectors offer the promise of normal incidence photodetection tunable over the range of 3-12 micrometers wavelength range at temperatures above 40 K. This system is aftractive because the Sisub(1-x)Gesubx offers greater compatibility with existing Si based signal processing circuitry. Band structures, momentum matrix elements and linear absorption coefficients are computed using a Luftinger-Kohn k/p analysis for Si/Sisub(1-x)Gesubx quantum wells grown in the 110 direction. The absorption coefficient as a function of energy and wavelength is calculated by two methods: a delta function fit to intersubband transitions, and a Lorentzian fit to intersubband transitions. Calculations were performed for parallel as well as normally incident radiation and the resulting absorption spectra are in good agreement with experimental observations.
Descriptors : *QUANTUM WELLS, *HETEROJUNCTIONS, *ABSORPTION COEFFICIENTS, MATHEMATICAL MODELS, THESES, LINEARITY, INFRARED DETECTORS, PHOTODETECTORS, ELECTRON TRANSITIONS, SILICON ALLOYS, MOLECULAR BEAM EPITAXY.
Subject Categories : Solid State Physics
Infrared Detection and Detectors
Distribution Statement : APPROVED FOR PUBLIC RELEASE