Accession Number : ADA325613

Title :   NATO Advanced Study Institute on Plasma Processing of Semiconductors.

Descriptive Note : Final rept. 1 Mar 96-28 Feb 97,

Corporate Author : NEBRASKA UNIV LINCOLN DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Williams, Frazer

PDF Url : ADA325613

Report Date : FEB 1997

Pagination or Media Count : 32

Abstract : Partial contents: Introduction to Plasma Etching; Plasma Chemistry, Basic Processes and PECVD; The Role of ions in Reactive Ion Etching with Low Density Plasmas; SiO2 Etching in High-Density Plasmas: Differences with Low-Density Plasmas; Introduction to Plasma Enhanced Chemical Vapor Deposition; Topography Evolution During Semiconductor Processing; Deposition of Amorphous Silicon; High Density Sources for Plasma Etching; Resonant Plasma Excitation by Electron Cyclotron Waves-Fundamentals and Applications; The Transition from Capacitive to Inductive to Wave Sustained Discharges.

Descriptors :   *PROCESSING, *PLASMAS(PHYSICS), *SEMICONDUCTORS, *ETCHING, NATO, SILICON DIOXIDE, EXCITATION, REACTIVITIES, CHEMICAL VAPOR DEPOSITION, AMORPHOUS MATERIALS, ION BEAMS, TOPOGRAPHY, CHEMISTRY, ELECTRONS, RESONANCE, HIGH DENSITY, ELECTRIC DISCHARGES, LOW DENSITY, WAVES, CYCLOTRONS.

Subject Categories : Physical Chemistry
      Electrical and Electronic Equipment
      Plasma Physics and Magnetohydrodynamics

Distribution Statement : APPROVED FOR PUBLIC RELEASE