Accession Number : ADA325616
Title : (AASERT-93) Field-Effect-Controlled, Coulomb-BlocKage Single-Electron Transistor in Silicon.
Descriptive Note : Final rept. 15 Aug 93-14 Aug 96,
Corporate Author : MASSACHUSETTS INST OF TECH CAMBRIDGE
Personal Author(s) : Antoniadis, Dimitri ; Carter, David
PDF Url : ADA325616
Report Date : 10 MAR 1997
Pagination or Media Count : 5
Abstract : X-ray nanolithography for device fabrication was extended farther than previously reported. A new substrate photoelectron effect in x-ray nanolithography was observed. A way to circumvent this apparent limit to the resolution limits of x-ray nanolithography for real devices was found. Novel coulomb-blockade devices have been fabricated using this modified process. Preliminary measurements are underway on devices which should allow a better understanding of how the coulomb blockade disappears as coupling of the quantum dot to the environment increases via either a tunnel barrier or a quantum point contact.
Descriptors : *FIELD EFFECT TRANSISTORS, *LITHOGRAPHY, *ELECTRONS, *SILICON, QUANTUM THEORY, RESOLUTION, SUBSTRATES, X RAYS, TUNNELS, BARRIERS, PHOTOELECTRONS.
Subject Categories : Electrical and Electronic Equipment
Printing and Graphic Arts
Quantum Theory and Relativity
Nuclear Physics & Elementary Particle Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE