Accession Number : ADA325622

Title :   Formation of Semiconductor Interfaces: Proceedings of the Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton, NJ, USA, June 26-30,1995.

Corporate Author : PRINCETON UNIV NJ

Personal Author(s) : Kahn, A. ; Ludeke, R.

PDF Url : ADA325622

Report Date : 1996

Pagination or Media Count : 732

Abstract : This special volume contains the proceedings of the Fifth International Conference on the Formation of Semiconductor Interfaces. This fifth edition of the conference is aimed at providing a review of state of the art experimental and theoretical research on structural and electronic properties of semiconductor interfaces. The scientific program focused on various aspects of (1) semiconductor nanostructures, (2) thin insulators on semiconductors, (3) highly lattice mismatched heterostructures, (4) passivation and surfactants, (5) atom manipulation on semiconductor surfaces, (6) wide band gap semiconductors, (7) interfaces of organic semiconductors, (8) semiconductor heterojunctions, (9) metal semiconductor interfaces, as well as (10) clean surfaces and adsorbates.

Descriptors :   *HETEROJUNCTIONS, *METAL OXIDE SEMICONDUCTORS, *SEMICONDUCTING FILMS, *SCHOTTKY BARRIER DEVICES, SYMPOSIA, THIN FILMS, EPITAXIAL GROWTH, SURFACE ACTIVE SUBSTANCES, QUANTUM ELECTRONICS, PASSIVITY, SILICON COATINGS, ELECTRICAL INSULATION, BULK SEMICONDUCTORS, MOLECULAR BEAM EPITAXY, NANOTECHNOLOGY.

Subject Categories : Electrical and Electronic Equipment
      Solid State Physics

Distribution Statement : APPROVED FOR PUBLIC RELEASE