Accession Number : ADA325624

Title :   Defects and Impurities in 4H- and 6H-SiC Homoepitaxial Layers: Identification, Origin, Effect on Properties of Ohmic Contacts and Insulating Layers and Reduction.

Descriptive Note : Quarterly rept. 1 Jan-31 Mar 97,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH DEPT OF MATERIALS SCIENCE AND ENGINEERING

Personal Author(s) : Davis, R. F. ; Aboelfotoh, M. O. ; Baliga, B. J. ; Nemanich, R. J. ; Busby, R. S.

PDF Url : ADA325624

Report Date : MAR 1997

Pagination or Media Count : 33

Abstract : Exposure of the 6H-SiC(000l) sub Si surface to atomic H selectively removed Si and converted the (3x3) surface to a (1x1) surface as determined from the results of X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and temperature programmed desorption (TPD). Reduction and loss of the Si 2p XPS peak from the (3x3) surface were observed. A three-step oxide growth process is being developed. The system will allow for an integrated process to be used in the investigation of oxide growth on 6H- and 4H-SiC. Preliminary investigations of the surface preparation revealed that SiC is not as readily cleaned as Si.

Descriptors :   *LAYERS, *INSULATION, *EPITAXIAL GROWTH, *IMPURITIES, *REDUCTION, *SURFACES, *SILICON CARBIDES, *DEFECT ANALYSIS, INTEGRATED SYSTEMS, HYDROGEN, LOW ENERGY, OXIDES, X RAY PHOTOELECTRON SPECTROSCOPY, ELECTRON DIFFRACTION, DESORPTION, AUGER ELECTRON SPECTROSCOPY, ATOMIC PROPERTIES, ELECTRIC CONTACTS.

Subject Categories : Inorganic Chemistry
      Crystallography
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE