Accession Number : ADA325631
Title : Impurity-Related Optical Emission Alloys and Superlattices.
Descriptive Note : Final rept. 1 Jun 92-30 Nov 96,
Corporate Author : ROCHESTER UNIV NY INST OF OPTICS
Personal Author(s) : Hall, Dennis G.
PDF Url : ADA325631
Report Date : MAY 1997
Pagination or Media Count : 28
Abstract : This report describes the results of experimental investigations of impurity-related, near infrared optical emission from crystalline silicon and from silicon germanium superlattices grown by molecular beam epitaxy (MBE). Radiative impurities can be introduced into silicon germanium superlattices by post growth ion implantation or by co-evaporation during growth. The research has demonstrated, using beryllium (Be) impurities, that radiative Be-pairs can be formed during MBE growth of silicon germanium superlattices. Secondary ion mass spectroscopy (SIMS) measurements reveal that the Be can be localized in the alloy layers of the superlattice. Investigations to date of superlattices (multi-quantum-wells) made up of alternating layers of silicon and a selected, Be-doped, silicon germanium alloy show that quantum-confined bound- exciton emission can be observed when the alloy layers are below 5.0 nm in thickness. Spectral blue-shifts caused by quantum confinement have been observed. The results of theoretical calculations reveal that the isoelectronic bound-exciton emission from the Be-complex should be able to produce gain and laser action in a suitably defined, silicon-based, optical waveguide structure.
Descriptors : *SUPERLATTICES, *DOPING, *BERYLLIUM, *GERMANIUM ALLOYS, *SILICON ALLOYS, *MOLECULAR BEAM EPITAXY, EMISSION, THICKNESS, LAYERS, QUANTUM WELLS, MASS SPECTROSCOPY, ION IMPLANTATION, OPTICAL WAVEGUIDES, NEAR INFRARED RADIATION, EXCITONS.
Subject Categories : Crystallography
Solid State Physics
Distribution Statement : APPROVED FOR PUBLIC RELEASE