Accession Number : ADA325634

Title :   Investigation of Normal Incidence High Performance P-Type Strained Layer InGaAs/AlGaAs and GaAs/AlGaAs Quantum Well Infrared Photodetectors.

Descriptive Note : Final rept. 1 Jul 93-30 Jun 97,

Corporate Author : FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s) : Chu, Jerome T. ; Li, Sheng S.

PDF Url : ADA325634

Report Date : 30 JUN 1997

Pagination or Media Count : 97

Abstract : In this research project, we have demonstrated several novel strained layer p-type quantum well infrared photodetectors (QWIPs) for the 3-5 um mid-wavelength infrared (MWIR) and 8-14 um long-wavelength infrared (LWIR) detection. These normal incidence p-QWIPs employed the tensile and compressive strained layer quantum well structures to enhance the performance of the p-QWIPs in the MWIR and LWIR spectral bands. Peak detection wavelengths at 7.4, 8.4, 9.2 and 10.1 um with corresponding detectivities of 4x10(9), 1.66x10(10), 2.7x10(9) and 1.04x10(9) cm-Hz(1/2)/W were obtained for these QWIPs. In addition, a novel step bound to miniband InGaAs/GaAs/AlGaAs p-QWIP with a peak wavelength at 10.4 um and D*=4x10(9) cm-Hz(1/2)/W and a two-stack p-QWIP with peak wavelengths at 10, 5.4 and 4.8 um, D*=1.1x10(10) for the LWIR and 5.5x10(11) cm-Hz(1/2)W for the MWIR were obtained for these QWIPs. Finally, a tensile strain layer InGaAs/InAlAs p-QWIP with very low dark current, high detectivity and high BLIP temperature has also been demonstrated.

Descriptors :   *QUANTUM WELLS, *ALUMINUM GALLIUM ARSENIDES, *INFRARED DETECTORS, *PHOTODETECTORS, QUANTUM THEORY, TENSILE STRESS, FAR INFRARED RADIATION, LONG WAVELENGTHS, COMPRESSIVE STRENGTH, NEAR INFRARED RADIATION, BAND SPECTRA, ABSORPTION COEFFICIENTS, INDIUM COMPOUNDS.

Subject Categories : Infrared Detection and Detectors
      Quantum Theory and Relativity

Distribution Statement : APPROVED FOR PUBLIC RELEASE