Accession Number : ADA325751

Title :   Rapid Thermal Processing of Semiconductors at High Vapor Densities.

Descriptive Note : Final rept. 15 Jun 95-31 Dec 96,

Corporate Author : NORTH CAROLINA STATE UNIV AT RALEIGH CENTER FOR RESEARCH IN SCIENTIFIC COMPUTA TION

Personal Author(s) : Banks, H. T. ; Bachmann, K. J.

PDF Url : ADA325751

Report Date : MAR 1997

Pagination or Media Count : 8

Abstract : P-polarized reflectance spectroscopy (PRS) was developed as a method of real-time process monitoring. The relation between the measured reflectance and the chemical kinetics driving the growth of an epitaxial film on the surface of a substrate has been established for the conditions of pulsed chemical beam epitaxy. The precision of the monitoring of molecular layer growth by PRS has been evaluated. Also, limitations to the accuracy of PRS monitoring have been assessed. The design of the RTOMCVD reactor has been completed. Experimental validation of predictions of temperature distributions and flow have been initiated. We have applied the reduced basis method for control of the viscous incompressible gas flow dynamics by boundary surface controls which suggests that real time simulation and control can be done by lower order reduced order control systems.

Descriptors :   *CHEMICAL VAPOR DEPOSITION, *EPITAXIAL GROWTH, *REFLECTANCE, *GAS FLOW, THERMAL PROPERTIES, COMPUTERIZED SIMULATION, MONITORING, REAL TIME, REACTION KINETICS, FILMS, SUBSTRATES, SEMICONDUCTORS, SURFACES, INCOMPRESSIBLE FLOW, MOLECULAR BEAM EPITAXY.

Subject Categories : Mfg & Industrial Eng & Control of Product Sys
      Crystallography
      Atomic and Molecular Physics and Spectroscopy

Distribution Statement : APPROVED FOR PUBLIC RELEASE