Accession Number : ADA325856

Title :   Vertical Cavity Laser Joint Study Program with Rome Laboratory.

Descriptive Note : Final rept. Jul 95-Jul 96,

Corporate Author : CORNELL UNIV ITHACA NY SCHOOL OF ELECTRICAL ENGINEERING

Personal Author(s) : Schaff, William J.

PDF Url : ADA325856

Report Date : APR 1997

Pagination or Media Count : 29

Abstract : This effort investigated the development of short wavelength VCSEL (vertical cavity surface emitting laser) material for potential application in optical interconnects for radar signal processing subsystems. GaN is the material system used and growth via molecular beam epitaxy on sapphire substrates was extensively investigated. Dry etching studies were performed. Due to the poor quality of these initial growths, VCSELs could not be fabricated.

Descriptors :   *LASER CAVITIES, *LASER MATERIALS, SIGNAL PROCESSING, NITRIDES, N TYPE SEMICONDUCTORS, RADAR SIGNALS, OPTICAL STORAGE, OPTICAL PROCESSING, GALLIUM COMPOUNDS, MOLECULAR BEAM EPITAXY.

Subject Categories : Lasers and Masers
      Crystallography

Distribution Statement : APPROVED FOR PUBLIC RELEASE