Accession Number : ADA326141

Title :   Extremely High Frequency Directly Modulated Lasers.

Descriptive Note : Final rept. Sep 93-Sep 96,

Corporate Author : CORNELL UNIV ITHACA NY

Personal Author(s) : Spencer, Robert ; Greenberg, Joseph ; Eastman, Lester

PDF Url : ADA326141

Report Date : APR 1997

Pagination or Media Count : 56

Abstract : Several novel directly modulated semiconductor laser structures have been investigated to increase the bandwidth of direct modulation. Detailed theoretical models were developed and a high speed directly modulated laser was fabricated and tested. Corner reflector lasers that were compatible with monolithic integration were demonstrated to have the largest directly modulated bandwidth of any single sided output laser to date. The semiconductor laser tested produced a 20 GHz bandwidth. Theoretical and experimental results indicate that device heating was a major factor in limiting bandwidth of semiconductor lasers. Experiments utilizing flip chip bonding semiconductor laser to diamond were conducted. These devices showed considerable improvements in both their DC and spectral behavior.

Descriptors :   *SEMICONDUCTOR LASERS, *LASER MODULATORS, *EXTREMELY HIGH FREQUENCY, MATHEMATICAL MODELS, OUTPUT, DIAMONDS, COSTS, CODING, INTEGRATION, LIMITATIONS, MONOLITHIC STRUCTURES(ELECTRONICS), BANDWIDTH, MODULATION, DIRECT CURRENT, SPECTRUM ANALYSIS, HEAT SINKS, CORNER REFLECTORS.

Subject Categories : Lasers and Masers

Distribution Statement : APPROVED FOR PUBLIC RELEASE